This document describes the features and characteristics of the BFS20W NPN medium frequency transistor, including low current, low voltage, and very low feedback capacitance. The transistor is suitable for IF and VHF applications in thick and thin-film circuits.
The document is a product specification datasheet for the Philips BFS20W, an NPN medium frequency transistor designed for IF and VHF applications in thick and thin-film circuits. It features low current (max. 25 mA) and low voltage (max. 20 V) capabilities with very low feedback capacitance.
| Collector current (DC) | 25 mA |
|---|---|
| Peak collector current | 25 mA |
| Peak base current | 200 mA |
| Total power dissipation | 200 mW |
| Collector-base voltage | 30 V |
| Collector-emitter voltage | 20 V |
| Emitter-base voltage | 4 V |
| Feedback capacitance | 350 fF |
| Transition frequency | 360 MHz |
| Package type | SOT323 (SC-70) |
It is intended for IF and VHF applications in both thick and thin-film circuits.
The maximum DC and peak collector current is 25 mA.
The device can operate in ambient temperatures ranging from -65 to +150 °C.