MUN5111DW1T1 Series SOT-363 Package Dual Bias Resistor PNP Silicon Surface Mount Transistors
The MUN5111DW1T1 Series consists of PNP silicon surface mount transistors with a monolithic bias resistor network housed in an SOT-363 package. This design integrates a single transistor and a two-resistor bias network (series base and base-emitter) into one device, eliminating the need for external components to simplify circuit design and reduce board space.
The document provides comprehensive electrical characteristics including maximum ratings, thermal properties, cutoff currents, breakdown voltages, current gain, saturation voltage, and output capacitance. It also includes typical performance graphs such as DC Current Gain versus Collector Current and Output Capacitance versus Reverse Bias Voltage for various models within the series.
| Collector-Base Voltage | -50 Vdc |
|---|---|
| Collector-Emitter Voltage | -50 Vdc |
| Collector Current | -100 mA dc |
| Package Type | SOT-363 |
| Junction and Storage Temperature | -55 to +150 °C |
The BRT contains a single transistor with a monolithic bias network consisting of two resistors, designed to replace a single device and its external resistor bias network.
The maximum total device dissipation when one junction is heated at 25°C is 187 mW.