This document describes the maximum ratings and electrical characteristics of M35-1/3 Leshan Radio Company, Ltd.'s general purpose transistors, PNP silicon.
The document provides the specifications for the 2SA1037AK*LT1 general‑purpose PNP silicon transistor. It includes maximum ratings, device marking, and detailed electrical characteristics for various operating conditions.
Key data such as collector‑emitter voltage, current gain, transition frequency, and capacitance are presented, along with characteristic curves illustrating output behavior and gain versus collector current.
| Collector‑Emitter Voltage (Vceo) | 50 V |
|---|---|
| Collector‑Base Voltage (Vcbo) | -60 V |
| Emitter‑Base Voltage (Vebo) | -6.0 V |
| Continuous Collector Current (Ic) | -150 mA |
| Collector Power Dissipation (Pce) | 0.2 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tsa) | -55 ~ +150 °C |
| Package | SOT‑23 (TO‑236AB) |
| DC Current Gain (hFE) | 120 ~ 560 |
| Transition Frequency (fT) | 140 MHz |
| Output Capacitance (Coss) | 4.0 ~ 5.0 pF |
The maximum collector‑emitter voltage is 50 V.
The DC current gain ranges from 120 to 560.
It is supplied in an SOT‑23 (TO‑236AB) package.