LRC Manuals

This document describes the features and applications of the BC846b-1/5 1 3 2 Dual General Purpose Transistors produced by LESHAN RADIO COMPANY, LTD. These transistors are designed for general purpose amplifier applications and are housed in the SOT–363/SC–88 package, suitable for low power surface mount applications.

This document describes the features and characteristics of the dual series switching diodes, LBAV99WT1 and LBAV99RWT1, produced by LESHAN RADIO COMPANY, LTD. They have a reverse voltage of 70V and a forward current of 215mA. They are suitable for applications such as ESD protection, polarity reversal protection, data line protection, inductive load protection, and steering logic.

MC74VHC1G135 is a single gate MOS open drain output trigger fabricated with silicon gate CMOS technology produced by LESHAN RADIO COMPANY, LTD.

This document describes the maximum ratings and electrical characteristics of M35-1/3 Leshan Radio Company, Ltd.'s general purpose transistors, PNP silicon.

L2SC4617*T1 is a general purpose NPN silicon transistor manufactured by LESHAN RADIO COMPANY, LTD. Its rated maximum collector-emitter voltage is 60V, maximum collector-base voltage is 50V, maximum emitter-base voltage is 7V, maximum collector current is 0.15A, maximum collector power dissipation is 0.15W, maximum working temperature is 150℃, and minimum working temperature is -55℃.

This document describes the maximum ratings, electrical characteristics, and application areas of LESHAN RADIO COMPANY, LTD. G16–1/2. The product is a Silicon Hot–Carrier Diode Schottky Barrier Diode primarily used for high-efficiency UHF and VHF detector applications.

MUN5111DW1T1 Series SOT-363 Package Dual Bias Resistor PNP Silicon Surface Mount Transistors

This document provides information about the maximum ratings, thermal characteristics, and electrical performance parameters of the K4-1/4 1 3 2 general purpose NPN silicon transistors produced by LESHAN RADIO COMPANY, LTD.

MUN5211dw–1/8 is a dual bias resistor transistor that contains a single transistor and a monolithic bias network consisting of two resistors, a series base resistor and a series emitter resistor. The device has a maximum collector-emitter voltage of 50 Vdc and a maximum collector current of 100 mAdc.

This document describes the maximum ratings and electrical characteristics of LESHAN RADIO COMPANY, LTD.'s LRB521S-30T1 1/3 SCHOTTKY BARRIER DIODE, as well as its applications and features.

This document provides the maximum ratings, thermal characteristics, electrical characteristics, and device marking of the M7–1/6 1 3 2 General Purpose Transistors by LESHAN RADIO COMPANY, LTD. The transistors are PNP silicon devices with a collector current of -100mAdc and a maximum voltage of -32Vdc.

BCW33LT1 is a NPN Silicon General Purpose Transistor produced by LESHAN RADIO COMPANY, LTD. Its maximum collector-emitter voltage is 20Vdc, maximum collector-base voltage is 30Vdc, maximum emitter-base voltage is 5.0Vdc, and maximum collector current is 100mAdc.

This data sheet contains BCW61BLT1 data sheet, which mainly contains the maximum rating, thermal characteristics, device marking, electrical characteristics and other information.

This document describes the maximum ratings, thermal characteristics, and electrical characteristics of LESHAN RADIO COMPANY, LTD. M11–1/2 1 3 2 General Purpose Transistors NPN Silicon.

The data sheet provides information on the maximum ratings, thermal characteristics, and electrical characteristics of BC817-16LT1, BC817-25LT1, and BC817-40LT1.