Key facts
- Manuals
- 17
- Last added
- 2012-08-03
Latest LRC manuals
LRC 1N4001E-1N4007E Manual
Technical data of 1A GENERAL DIODES, including maximum peak reverse voltage, maximum average rectified current, maximum peak surge current, maximum reverse current and so on.
LRC RB721Q handbook
RB721Q is a Schottky diode produced by LESHAN RADIO COMPANY, LTD. Its rated forward voltage is 20V, reverse voltage is 30V, current is 200mA, peak reverse current is 125mA, and working temperature range is -40℃ to 125℃.
LRC General Purpose Transistors NPN Silicon BC817-16LT1 BC817-25LT1 BC817-40LT1 handbook
The data sheet provides information on the maximum ratings, thermal characteristics, and electrical characteristics of BC817-16LT1, BC817-25LT1, and BC817-40LT1.
LRC BCW65ALT1 Manual
This document describes the maximum ratings, thermal characteristics, and electrical characteristics of LESHAN RADIO COMPANY, LTD. M11–1/2 1 3 2 General Purpose Transistors NPN Silicon.
LRC BCW61BLT1 BCW61CLT1 BCW61DLT1 Manual
This data sheet contains BCW61BLT1 data sheet, which mainly contains the maximum rating, thermal characteristics, device marking, electrical characteristics and other information.
LRC BCW33LT1 handbook
BCW33LT1 is a NPN Silicon General Purpose Transistor produced by LESHAN RADIO COMPANY, LTD. Its maximum collector-emitter voltage is 20Vdc, maximum collector-base voltage is 30Vdc, maximum emitter-base voltage is 5.0Vdc, and maximum collector current is 100mAdc.
LRC BCW29LT1/BCW30LT1 handbook
This document provides the maximum ratings, thermal characteristics, electrical characteristics, and device marking of the M7–1/6 1 3 2 General Purpose Transistors by LESHAN RADIO COMPANY, LTD. The transistors are PNP silicon devices with a collector current of -100mAdc and a maximum voltage of -32Vdc.
LRC SCHOTTKY BARRIER DIODE LRB521S-30T1
This document describes the maximum ratings and electrical characteristics of LESHAN RADIO COMPANY, LTD.'s LRB521S-30T1 1/3 SCHOTTKY BARRIER DIODE, as well as its applications and features.
LRC MUN5211DW1T1 Series handbook
MUN5211dw–1/8 is a dual bias resistor transistor that contains a single transistor and a monolithic bias network consisting of two resistors, a series base resistor and a series emitter resistor. The device has a maximum collector-emitter voltage of 50 Vdc and a maximum collector current of 100 mAdc.
LRC BC846AWT1 BWT1/BC847AWT1 BWT1/CWT1/BC848AWT1 BWT1/CWT1 General Purpose Transistors
This document provides information about the maximum ratings, thermal characteristics, and electrical performance parameters of the K4-1/4 1 3 2 general purpose NPN silicon transistors produced by LESHAN RADIO COMPANY, LTD.
LRC MUN5111DW1T1 Series Dual Bias Resistor Transistors handbook
MUN5111DW1T1 Series SOT-363 Package Dual Bias Resistor PNP Silicon Surface Mount Transistors
LRC MMBD301LT1 handbook
This document describes the maximum ratings, electrical characteristics, and application areas of LESHAN RADIO COMPANY, LTD. G16–1/2. The product is a Silicon Hot–Carrier Diode Schottky Barrier Diode primarily used for high-efficiency UHF and VHF detector applications.
LRC L2SC4617*T1 General Purpose Transistors NPN Silicon
L2SC4617*T1 is a general purpose NPN silicon transistor manufactured by LESHAN RADIO COMPANY, LTD. Its rated maximum collector-emitter voltage is 60V, maximum collector-base voltage is 50V, maximum emitter-base voltage is 7V, maximum collector current is 0.15A, maximum collector power dissipation is 0.15W, maximum working temperature is 150℃, and minimum working temperature is -55℃.
LRC 2SA1037AK*LT1 Manual
This document describes the maximum ratings and electrical characteristics of M35-1/3 Leshan Radio Company, Ltd.'s general purpose transistors, PNP silicon.
LRC MC74VHC1G135 DATA SHEET
MC74VHC1G135 is a single gate MOS open drain output trigger fabricated with silicon gate CMOS technology produced by LESHAN RADIO COMPANY, LTD.