This document provides the maximum ratings, thermal characteristics, electrical characteristics, and device marking of the M7–1/6 1 3 2 General Purpose Transistors by LESHAN RADIO COMPANY, LTD. The transistors are PNP silicon devices with a collector current of -100mAdc and a maximum voltage of -32Vdc.
This document provides a comprehensive technical overview of the LRC BCW29LT1 and BCW30LT1, which are PNP silicon general purpose transistors. The datasheet specifies maximum ratings such as a collector-emitter voltage of -32V and a continuous collector current of -100mA. It also details thermal characteristics, including total device dissipation and junction-to-ambient thermal resistance for both FR-5 and alumina substrate packages.
The document further presents extensive electrical characteristics for both OFF and ON states, including DC current gain, saturation voltage, and noise figures. It includes numerous graphs illustrating typical noise characteristics, static characteristics, dynamic characteristics, and transient thermal resistance curves to assist in circuit design and application.
| Collector-Emitter Voltage | -32 V |
|---|---|
| Collector-Base Voltage | -82 V |
| Emitter-Base Voltage | -5.0 V |
| Collector Current— Continuous | -100 mA |
| Total Device Dissipation (FR-5) | 225 mW |
| Total Device Dissipation (Alumina) | 300 mW |
| Junction and Storage Temperature | -55 to +150 °C |
| DC Current Gain (BCW29LT1) | 120 to 260 |
| DC Current Gain (BCW30LT1) | 215 to 500 |
| Collector—Emitter Saturation Voltage | -0.3 V |
| Output Capacitance | 7.0 pF |
| Noise Figure | 4.10 dB |
The maximum collector-emitter voltage (Vceo) is -32 V.
The continuous collector current (Ic) is rated at -100 mA.
The junction and storage temperature range from -55 to +150 °C.
The DC current gain (hFE) for the BCW29LT1 ranges from 120 to 260.