This document describes the maximum ratings, electrical characteristics, and application areas of LESHAN RADIO COMPANY, LTD. G16–1/2. The product is a Silicon Hot–Carrier Diode Schottky Barrier Diode primarily used for high-efficiency UHF and VHF detector applications.
The document describes the LRC MMBD301LT1, a silicon hot-carrier diode designed primarily for high-efficiency UHF and VHF detector applications. It is also suitable for fast switching RF and digital applications and is supplied in an inexpensive plastic SOT-23 package or Surface Mount package.
Key specifications include a reverse voltage rating of 30 Volts, extremely low minority carrier lifetime (15ps typical), and very low capacitance (1.5pF max). The datasheet details maximum ratings at a junction temperature of 125°C and provides electrical characteristics such as forward voltage drop and reverse leakage current.
| Reverse Voltage (Va) | 30 Volts |
|---|---|
| Forward Power Dissipation @TA=25°C | 280 mW (MMBD301), 200 mW (MMBD301LT1) |
| Operating Junction Temperature Range | -55 to +125°C |
| Storage Temperature Range | -55 to +150°C |
| Total Capacitance (Max) | 1.5 pF @ Va=15V |
| Reverse Leakage Current (Typical) | 13 nA @ Va=25V |
These devices are designed primarily for high-efficiency UHF and VHF detector applications.
Yes, they are also available in a Surface Mount package.