BCW33LT1 is a NPN Silicon General Purpose Transistor produced by LESHAN RADIO COMPANY, LTD. Its maximum collector-emitter voltage is 20Vdc, maximum collector-base voltage is 30Vdc, maximum emitter-base voltage is 5.0Vdc, and maximum collector current is 100mAdc.
This document is a technical datasheet for the BCW33LT1, an NPN silicon transistor manufactured by Leshan Radio Company. It provides comprehensive data on maximum ratings, including collector-emitter voltage of 20 Vdc and continuous collector current of 100 mA.
The datasheet details electrical characteristics such as DC current gain (hFE) ranging from 4 to 800 and noise figure specifications. It also includes thermal characteristics with a total device dissipation of up to 300 mW on an alumina substrate, along with typical static and dynamic performance graphs.
| Collector–Emitter Voltage (VCEO) | 20 Vdc |
|---|---|
| Continuous Collector Current (IC) | 100 mA |
| DC Current Gain (hFE) | 4 to 800 |
| Collector–Emitter Saturation Voltage (VCE(sat)) | Max 0.25 Vdc |
| Total Device Dissipation (Alumina Substrate) | 300 mW |
The transistor can handle a continuous collector current of up to 100 mAdc.
The total device dissipation reaches 300 mW with an alumina substrate at 25°C.
The device has a maximum collector–Emitter Voltage of 20 Vdc.