L2SC4617*T1 is a general purpose NPN silicon transistor manufactured by LESHAN RADIO COMPANY, LTD. Its rated maximum collector-emitter voltage is 60V, maximum collector-base voltage is 50V, maximum emitter-base voltage is 7V, maximum collector current is 0.15A, maximum collector power dissipation is 0.15W, maximum working temperature is 150℃, and minimum working temperature is -55℃.
This datasheet describes the L2SC4617*T1 NPN silicon general‑purpose transistor. It lists absolute maximum ratings such as collector‑base voltage of 60 V, collector‑emitter voltage of 50 V, and a junction temperature limit of 150 °C, as well as typical electrical parameters like hFE ranging from 120 to 560 and a transition frequency of 180 MHz.
The device is supplied in an SC‑89 package, with detailed dimensions and lead tolerances. Marking information and various characteristic curves for collector‑emitter saturation voltage, output capacitance, and time constants are also included.
| Collector‑base voltage (Vcbo) | 60 V |
|---|---|
| Collector‑emitter voltage (Vceo) | 50 V |
| Emitter‑base voltage (Vebo) | 7 V |
| Collector current (Ic) | 0.15 A |
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 °C to +150 °C |
| Transition frequency (ft) | 180 MHz |
| DC current gain (hFE) | 120 – 560 |
| Output capacitance (Cob) | 2.0 – 3.5 pF |
The maximum collector‑emitter voltage is 50 V.
It is supplied in an SC‑89 package.
The DC current gain ranges from 120 to 560.
The transition frequency is specified as 180 MHz.