This document describes the features and applications of the BC846b-1/5 1 3 2 Dual General Purpose Transistors produced by LESHAN RADIO COMPANY, LTD. These transistors are designed for general purpose amplifier applications and are housed in the SOT–363/SC–88 package, suitable for low power surface mount applications.
This document describes the dual general‑purpose NPN transistors in the BC846, BC847 and BC848 families. It includes maximum ratings, thermal characteristics, electrical parameters and ordering details for the SOT‑363 packaged devices.
Key data such as collector‑emitter voltage limits, continuous collector current, total device dissipation and safe operating area curves are presented, allowing designers to select the appropriate part and ensure reliable operation under specified conditions.
| Collector‑Emitter Voltage (Vceo) | 65 V (BC846), 45 V (BC847), 30 V (BC848) |
|---|---|
| Total Device Dissipation (Ptot) | 380 mW |
| Continuous Collector Current (Ic) | 100 mA |
The BC846 transistor can withstand up to 65 V between collector and emitter.
3000 units per reel.
The junction‑to‑ambient thermal resistance is 328 °C/W.