This document provides information about the maximum ratings, thermal characteristics, and electrical performance parameters of the K4-1/4 1 3 2 general purpose NPN silicon transistors produced by LESHAN RADIO COMPANY, LTD.
This document provides technical specifications for a series of NPN silicon general-purpose transistors designed for low-power surface mount applications. The devices are housed in the SOT-323/SC-70 package and are intended primarily for use as amplifiers.
The datasheet details maximum ratings, thermal characteristics, and electrical parameters including DC current gain, saturation voltages, and small-signal characteristics such as bandwidth product and noise figure. It includes specific data points for the BC846, BC847, and BC848 series variants.
| Package Type | SOT-323/SC-70 |
|---|---|
| Collector-Emitter Voltage (BC846) | 65 V |
| Collector Current (Continuous) | 100 mA |
| Total Device Dissipation (FR-5 Board) | 150 mW |
| Junction and Storage Temperature Range | -55 to +150 °C |
These transistors are designed for general purpose amplifier applications.
The device operates between -55°C and +150°C for junction and storage.