BAT 47 and BAT 48 are general purpose metal-silicon diodes with very low turn-on voltage and fast switching characteristics. These devices have integrated protection against excessive voltages such as electrostatic discharges.
This document provides technical specifications for the BAT47 and BAT48 series of general-purpose metal-to-silicon Schottky diodes. These devices are designed with very low turn-on voltage and fast switching capabilities, housed in a DO-35 glass package.
The datasheet includes absolute maximum ratings such as repetitive peak reverse voltage up to 40V for the BAT48 model, along with forward continuous current limits. It also details static characteristics like barrier potential and leakage current at various temperatures, dynamic parameters including capacitance and switching times, and mechanical dimensions for assembly.
| Repetitive Peak Reverse Voltage (BAT47) | 20 V |
|---|---|
| Repetitive Peak Reverse Voltage (BAT48) | 40 V |
| Forward Continuous Current | 350 mA |
| Power Dissipation (Ta=25°C) | 330 mW |
| Storage Temperature Range | -65 to +150 °C |
| Package Type | DO-35 Glass |
The typical barrier potential at a junction temperature of 25°C and forward current of 0.1mA is 0.25V.
The maximum operating junction temperature (Tj) is +125 °C.