BTA10 GP is a low current triggered diode produced by ST Microelectronics. It has a rated current of 10A and a rated reverse blocking voltage of 400V or 600V. The device has high performance, low leakage current and low junction temperature characteristics, making it suitable for light dimming applications.
This document is a technical datasheet for the BTA10 GP triac manufactured by SGS-Thomson Microelectronics. It highlights features such as low holding current (Ih = 13mA max) and high surge current capability (Itsm = 126A). The device utilizes high-performance glass passivated chips in an insulated TO-220AB plastic package, making it suitable for light dimmer applications.
| RMS on-state current (IT) | 10 A |
|---|---|
| Non repetitive surge peak on-state current (TSM) | 126 A |
| Insulating voltage (VDRM/VRRM) | 400 V / 600 V |
| Storage and operating junction temperature range (Tstg) | - 40 to+ 150 °C |
| Junction to ambient thermal resistance (Rth j-a) | 60 °C/W |
| Package type | TO-220AB Plastic |
The maximum RMS on-state current (IT) at a temperature of 90 °C is 10 A.
Yes, its insulated TO-220AB package and high surge current make it well adapted to LIGHT DIMMER applications.
The datasheet recommends a specific cooling method with a torque value of 0.8 m.N.