This document describes the product specification of Philips Semiconductors' PowerMOS transistor BUK454-800A/B. The transistor is an N-channel enhancement mode field-effect power transistor, intended for use in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications. Its features include a maximum drain-source voltage of 800V, maximum drain current of 2.4A, maximum total power dissipation of 85W, and drain-source on-state resistance of 6-8Ω.
The document is a product specification datasheet for the Philips BUK454-800A/B PowerMOS transistor. This device is an N-channel enhancement-mode field-effect power transistor housed in a plastic TO220AB envelope, designed for use in switched mode power supplies (SMPS), motor control, welding, and general-purpose switching applications.
| Drain-source voltage (Max) | 800 V |
|---|---|
| Drain current (DC) Max @ 25°C | 2.4 A / 2.0 A |
| Total power dissipation Max @ 25°C | 85 W |
| Package Type | TO220AB |
The maximum drain-source voltage is 800 V.