This document describes the BF 987 G, a silicon N-channel MOSFET triode suitable for high-frequency stages up to 300 MHz, preferably in FM applications. It has high overload capability.
The document is a technical specification sheet for the Philips BF 987, a silicon N-channel MOSFET triode designed for high-frequency stages up to 300 MHz, particularly suitable for FM applications. It highlights the device's high overload capability and provides detailed ordering codes.
Key specifications include a maximum drain-source voltage of 20 V and a total power dissipation of 300 mW at an ambient temperature of 45 °C or lower. The datasheet details DC characteristics such as gate-source leakage current, breakdown voltages, and pinch-off voltage, alongside AC parameters like forward transconductance, output capacitance, noise figure, and power gain.
| Drain-source voltage (VDS) | 20 V |
|---|---|
| Total power dissipation (Ptot) | 300 mW |
| Storage temperature range (Tstg) | - 55 … + 150 ˚C |
| Gate-source peak current (–IGSM) | 10 mA |
| Drain current (ID) | 30 mA |
| Forward transconductance (gfs) | 14 – 16 mS |
| Output capacitance (Cdss) | 1 pF |
It is suitable for high-frequency stages up to 300 MHz.
Yes, it is preferably used in FM applications due to its high overload capability.