BF909 is a N-channel dual gate MOS-FET produced by Philips Semiconductors. It is specially designed for use at 5 V supply voltage. It has high forward transfer admittance, high forward transfer admittance to input capacitance ratio and low noise gain controlled amplifier. BF909 is suitable for 3 to 7 V supply voltage VHF and UHF applications, such as television tuners and professional communications equipment.
This datasheet provides product specifications for the Philips BF909 and BF909R, which are N-channel dual gate MOS-FETs. These devices are specially designed for use at 5 V supply voltage and feature high forward transfer admittance. They are intended for applications such as television tuners and professional communications equipment.
| Supply voltage | 5 V |
|---|---|
| Drain-source voltage | 7 V |
| Drain current | 40 mA |
| Total power dissipation | 200 mW |
| Operating junction temperature | 150 °C |
| Forward transfer admittance | 43 mS |
| Input capacitance at gate 1 | 4.3 pF |
| Noise figure | 2.8 dB |
They are used in VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
The maximum operating junction temperature is 150 °C.
The typical forward transfer admittance is 43 mS.