BF901 is a silicon N-channel dual gate MOS-FET produced by Philips Semiconductors. It is suitable for UHF and VHF applications, such as television tuners and professional communications equipment, especially suited for low voltage operation.
This document is a product specification datasheet for the Philips BF901 and BF901R, which are silicon n-channel dual gate MOS-FETs. These devices are designed for low voltage operation in UHF and VHF applications, such as television tuners and professional communications equipment. They feature a short channel design with high transconductance-to-input capacitance ratio and are protected against excessive input voltage surges by integrated back-to-back diodes.
| Junction temperature | 150 °C |
|---|---|
| Noise figure at 800 MHz | 1.7 dB |
| Feedback capacitance | 25 pF |
They are intended for UHF and VHF applications, such as television tuners and professional communications equipment.
They are protected by integrated back-to-back diodes between gates and source.
The maximum junction temperature is 150 °C.