BF998WR is a N-channel dual-gate MOS-FET produced by Philips Semiconductors with high forward transfer admittance, short channel characteristics and high forward transfer admittance to input capacitance ratio, used in VHF and UHF applications, such as television tuners and professional communication equipment.
This document is a product specification datasheet for the Philips BF998WR, an N-channel dual-gate MOS-FET. The device is a depletion type field-effect transistor housed in a plastic microminiature SOT343R package with interconnected source and substrate. It features integrated back-to-back diodes between gates and source to protect against excessive input voltage surges.
The datasheet provides comprehensive technical data including quick reference values, limiting values, thermal characteristics, static and dynamic characteristics, and typical performance curves. It highlights applications in VHF and UHF circuits, such as television tuners and professional communications equipment, operating with a 12 V supply voltage.
| Drain-source voltage | 12 V |
|---|---|
| Drain current | 30 mA |
| Total power dissipation | 300 mW |
| Operating junction temperature | 150 °C |
| Forward transfer admittance | 24 mS |
| Input capacitance at gate 1 | 2.1 pF |
| Reverse transfer capacitance | 25 pF |
| Noise figure | 1 dB |
It is used in VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
The transistor is in a plastic microminiature SOT343R package with source and substrate interconnected.
It is protected by integrated back-to-back diodes between gates and source.