Philips BF904; BF904R N-channel Dual Gate MOS-FETs Data Sheet

BF904; BF904R is an enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package, it has high transfer admittance to input capacitance ratio and superior cross-modulation performance during AGC.


Philips BF904; BF904R N-channel Dual Gate MOS-FETs Data Sheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
116 KB
Published
04 July, 2012
Updated
30 September, 2023
Model
BF904
MD5 checksum
1837ADC8259828DD9BE70BA0360091F0

About this manual

This datasheet covers the Philips BF904 and BF904R, which are N-channel dual gate MOS-FETs. These devices are specially designed for use at 5 V supply voltage and feature a short channel design with high transfer admittance to input capacitance ratio. They are suitable for low noise gain controlled amplifiers up to 1 GHz and offer superior cross-modulation performance during AGC.

What's inside

  • Features
  • Applications
  • Quick Reference Data
  • Limiting Values
  • Thermal Characteristics
  • Static Characteristics
  • Dynamic Characteristics
  • Typical Characteristics

Specifications

Operating junction temperature150 °C
Noise figure2 dB

Frequently asked questions

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

What supply voltage is this transistor specially designed for?

The product is specially designed for use at 5 V supply voltage.

What is the maximum total power dissipation for the BF904 model?

The maximum total power dissipation is 200 mW when the ambient temperature is below 50 °C.

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