BF904WR is an N-channel dual-gate MOS-FET designed for use at 5V supply voltage. It features a short channel transistor with high forward transfer admittance to input capacitance ratio, and can serve as a low noise gain controlled amplifier up to 1GHz. It also offers superior cross-modulation performance during AGC.
This datasheet describes the BF904WR, an N-channel dual-gate MOS-FET specifically designed for use at 5 V supply voltage. It features a short channel design with high forward transfer admittance to input capacitance ratio and is suitable for low noise gain controlled amplifiers up to 1 GHz. The device is intended for VHF and UHF applications, such as television tuners and professional communications equipment, utilizing a plastic microminiature SOT343R package.
| Supply Voltage | 3 to 7 V |
|---|---|
| Operating Junction Temperature | +150 °C |
| Forward Transfer Admittance | 25 mS |
| Input Capacitance at Gate 1 | 2.6 pF |
| Noise Figure | 2 dB |
| Package Type | SOT343R |
It is specially designed for use at 5 V supply voltage.
It is used in VHF and UHF applications such as television tuners and professional communications equipment.
The maximum operating junction temperature is +150 °C.