BF989 is a N-channel dual-gate MOS-FET produced by Philips. It has protection against excessive input voltage surges and is used in UHF television tuners and professional communication equipment.
The document describes the Philips BF989, which is a depletion type field-effect transistor housed in a plastic SOT143 microminiature package. The device features interconnected source and substrate connections and includes integrated back-to-back diodes between gates to protect against excessive input voltage surges.
It is designed for UHF applications such as television tuners and professional communication equipment. Key electrical characteristics include a maximum drain-source voltage of 20 V, a total power dissipation up to 200 mW at Tamb = 60 °C, and typical noise figures ranging from 1.6 dB to 2.8 dB depending on frequency.
| Junction temperature (Max) | 150 °C |
|---|
The maximum total power dissipation is up to 200 mW when the ambient temperature is 60 °C.
The maximum drain-source voltage is 20 V.