The BF990A is an N-channel dual-gate MOS-FET with integrated back-to-back diodes to protect against excessive input voltage surges. It is suitable for RF applications such as television tuners with a 12V supply voltage and professional communication equipment.
The Philips BF990A is a depletion type field-effect transistor housed in a plastic SOT143 microminiature package. It features integrated back-to-back diodes between the gates and source to protect against excessive input voltage surges. The device is designed for RF applications, specifically television tuners with a 12 V supply voltage and professional communication equipment.
| Junction temperature | 150 °C |
|---|---|
| Noise figure | 3 dB |
The device is suitable for RF applications such as television tuners with 12 V supply voltage and professional communication equipment.
The maximum junction temperature is 150 °C.
The device is in a plastic SOT143 microminiature package.