BF904A is a N-channel dual gate MOS-FET from Philips Semiconductors. It is designed for use at 5 V supply voltage and features high transfer admittance to input capacitance ratio, low noise gain controlled amplifier up to 1 GHz and superior cross-modulation performance during AGC.
This datasheet provides technical specifications for the Philips BF904A, BF904AR, and BF904AWR, which are N-channel dual gate MOS-FETs. These devices are specially designed for use at 5 V supply voltage and feature a short channel design with high transfer admittance to input capacitance ratio. They are intended for low noise gain controlled amplifier applications up to 1 GHz.
| Drain-source voltage | 7 V |
|---|---|
| Drain current | 30 mA |
| Total power dissipation | 200 mW |
| Forward transfer admittance | 25 mS |
| Input capacitance at gate 1 | 2.6 pF |
| Reverse transfer capacitance | 35 pF |
| Noise figure | 2 dB |
| Operating junction temperature | 150 °C |
They are designed for VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
The devices are specially designed for use at a 5 V supply voltage.
The maximum operating junction temperature is 150 °C.