BF909WR is an N-channel dual-gate MOS-FET specially designed for use at 5V supply voltage. It features a short channel transistor with high forward transfer admittance to input capacitance ratio and a low noise gain controlled amplifier up to 1 GHz. It also provides superior cross-modulation performance during AGC. It is suitable for VHF and UHF applications with 3 to 7V supply voltage, such as television tuners and professional communications equipment.
This document is a product specification datasheet for the Philips BF909WR, an N-channel dual-gate MOS-FET. The device features a short channel design optimized for use at 5 V supply voltages and includes an internal bias circuit to ensure superior cross-modulation performance during Automatic Gain Control (AGC). It is packaged in a plastic microminiature SOT343R package.
| Supply voltage range | 3 to 7 V |
|---|---|
| Operating junction temperature (Max) | 150 °C |
| Forward transfer admittance (Typ) | 43 mS |
| Noise figure (Typ) | 2.8 dB |