This document mainly introduces the maximum ratings, thermal characteristics and electrical characteristics of Motorola's NPN silicon transistors
This document provides technical data for the Motorola BF959/D, an NPN silicon VHF transistor. It outlines maximum operating ratings such as collector-emitter voltage and total device dissipation, along with thermal characteristics including junction-to-ambient resistance.
The datasheet also lists electrical characteristics for both OFF and ON states, covering breakdown voltages, cutoff currents, current gain, saturation voltages, bandwidth product (fT), noise figure, and capacitance values. Package dimensions for the TO-92 (TO-226AA) style are included with specific tolerances.
| Collector-Emitter Voltage (VCEO) | 20 Vdc |
|---|---|
| Collector-Base Voltage (VCBO) | 30 Vdc |
| Emitter-Base Voltage (VEBO) | 3.0 Vdc |
| Collector Current — Continuous (Io) | 100 mA |
| Total Device Dissipation @ Ta = 25°C (Plastic) | 625 mW |
| Thermal Resistance, Junction to Ambient (RθJA) | 200 °C/W |
| Current-Gain — Bandwidth Product (fT) @ Ic = 20 mA | 700 MHz |
| Noise Figure @ Ic = 4.0 mA, f = 200 MHz | 3.0 dB |
The device uses a TO-92 (TO-226AA) plastic package.
The junction and storage temperature ranges are -55 to +150 °C.
The continuous collector current rating is 100 mA.