The document introduces the Silicon Bipolar MMIC Amplifier from BGA 318 Semiconductor Group. It features a cascading 50-ohm gain block, typical gain of 16 dB at 1.0 GHz, typical P-1dB of 12 dBm at 1.0 GHz, and a 3 dB bandwidth from DC to 1.2 GHz.
This document provides preliminary technical data for the Siemens BGA 318, a cascable 50 Ohm gain block silicon bipolar MMIC amplifier. Key specifications include a typical insertion power gain of 16 dB at 1.0 GHz and a 3 dB bandwidth extending from DC to 1.2 GHz.
| Device current (Ip) | 60 mA |
|---|---|
| Total power dissipation (Prot) | 250 mW |
| Ag input power (Paein) | 5 dBm |
| Junction temperature (Tj) | 150 °C |
| Ambient temperature range | -65 ...+150 °C |
| Insertion power gain at 1 GHz | 16 dB |
| Noise figure at 1 GHz | 4 dB |
The typical gain is 16 dB at 1.0 GHz.
The maximum device current is 60 mA.
The maximum total power dissipation is 250 mW when the temperature is below 99 °C.