The IR2101/IR2102 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro- prietary HVIC and latch immune CMOS technolo- gies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
The IR2101(S) and IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. They utilize proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
| High side floating supply voltage | -0.3 to 625 V |
|---|---|
| Gate drive supply range | 10 to 20 V |
| Turn-on propagation delay (typ) | 160 ns |
| Turn-off propagation delay (typ) | 150 ns |
| Delay matching, HS & LS turn-on/off | 50 ns |
| Output high short circuit pulsed current | 130 mA |
| Output low short circuit pulsed current | 270 mA |
| Package types | 8 Lead PDIP, 8 Lead SOIC |
The gate drive supply range is from 10 to 20V.