The IR20153S is a high voltage, high speed power MOSFET driver. It features a floating channel, tolerance to negative transient voltage, dV/dt immunity, gate drive supply range of 5V to 20V, undervoltage lockout, internal recharge FET for bootstrap refresh, internal deadtime of 11µs and 0.8µs, CMOS Schmitt-triggered input logic, output out of phase with input, reset input, split pull-up and pull-down gate drive pins.
The IR20153S is a high voltage, high speed power MOSFET driver designed for floating channel applications. It utilizes proprietary HVIC and latch immune CMOS technologies to provide ruggedized monolithic construction compatible with standard CMOS logic inputs down to 3.3V.
Key features include an internal recharge FET for bootstrap refresh, undervoltage lockout (UVLO) protection, and split pull-up/pull-down gate drive pins. The device is fully operational up to 150V VOFFSET and tolerates negative transient voltages while being immune to dV/dt effects.
| Supply Voltage (VCC) | 5 to 20 V |
|---|---|
| Offset Supply Offset Voltage (VS) | -1.6 to 150 V |
| Peak Output Source Current | 800 mA (typ) at 16V |
| Peak Output Sink Current | 800 mA (typ) at 16V |
| Undervoltage Lockout Hysteresis (VCC) | 0.3 V max |
| Input-to-Output Turn-on Delay | 2.0 us max |
The device is fully operational up to a maximum VOFFSET of 150V.
Yes, it features an internal recharge FET designed for bootstrap refresh.
The device is available in an 8-Lead SOIC package.