IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications.
The document describes the IR2011(S) and IR2011(S) PbF, a high power, high speed power MOSFET driver with independent high and low side referenced output channels. These devices are designed for Audio Class D amplifiers and high power DC-DC SMPS converters, operating with a gate drive supply range from 10V to 20V. The floating channel is capable of driving an N-channel power MOSFET in the high side configuration up to 200 volts.
The datasheet provides absolute maximum ratings, recommended operating conditions, and dynamic and static electrical characteristics. It includes functional block diagrams, timing diagrams illustrating propagation delays and rise/fall times versus temperature and supply voltage, and case outlines for 8-Lead PDIP and 8-Lead SOIC packages. The document also specifies part numbering for lead-free and non-lead-free variants.
| High side floating supply voltage | -0.3 to 250 V |
|---|---|
| High side floating supply offset voltage | 200 V |
| Gate drive supply range | 10V to 20V |
| Turn-on propagation delay | 80 ns typ. |
| Turn-on rise time | 35 ns typ. |
| Turn-on delay matching | 20 ns max. |
| Turn-off delay matching | 20 ns max. |
| Output high short circuit pulsed current | 1.0 A |
| Output low short circuit pulsed current | 1.0 A |
The device is ideal for Audio Class D amplifiers and high power DC-DC SMPS converters.
The maximum high side floating supply voltage is 250V.
The gate drive supply range is from 10V to 20V.
Yes, an 8-Lead SOIC package is available as LEAD-FREE (PbF).