This document is the absolute maximum ratings of a automotive power MOSFET device produced by a company. The device uses the latest process technology from International Rectifier and has extremely low on-resistance and 175℃ maximum operating temperature.
This document provides technical specifications and characteristics for the International Rectifier IRF2805S and IRF2805L, which are N-channel HEXFET Power MOSFETs specifically designed for automotive applications. Key features include an ultra-low on-resistance of 4.7 mΩ, a maximum operating junction temperature of 175°C, and fast switching speeds suitable for use in climate control, ABS, electronic braking, and windshield wiper systems.
| Continuous Drain Current (25°C) | 135 A |
|---|---|
| Operating Junction Temperature | -55 to +175 °C |
| Static Drain-to-Source On-Resistance (Typ) | 3.9 mΩ |
| Drain-to-Source Breakdown Voltage | 55 V |
The device supports an operating junction temperature up to 175°C.
The typical static drain-to-source on-resistance (Rds(on)) is 3.9 mΩ.