IRF2805PbF HEXFET® Power MOSFET is a automotive grade power MOSFET from International Rectifier. It features advanced process technology, ultra low on-resistance, 175℃ operating temperature, fast switching, repetitive avalanche allowed, etc. It is suitable for applications such as climate control, ABS, electronic braking, windshield wipers.
This document is a datasheet for the IRF2805PbF, an N-channel Power MOSFET specifically designed for automotive applications such as climate control, ABS, and electronic braking. The device utilizes advanced process technology to achieve ultra-low on-resistance and supports a junction operating temperature up to 175°C. It is manufactured in a TO-220AB package and is lead-free (PbF).
| Continuous Drain Current (Package limited) | 75 A |
|---|---|
| Operating Junction Temperature | -55 to +175 °C |
| Drain-to-Source Breakdown Voltage | 55 V |
| Static Drain-to-Source On-Resistance | 4.7 mΩ |
| Package Type | TO-220AB |
| Lead Status | Lead-Free |
Yes, the 'P' in the part number indicates it is lead-free.
The maximum operating junction temperature is 175°C.
The typical static drain-to-source on-resistance is 3.9 mΩ.