This is a 4M x 16-bit dynamic random access memory (DRAM) that is fabricated using the most advanced 64Mbit CMOS silicon gate process technology. It has high performance and low power dissipation.
This document is a preliminary information datasheet for the Siemens HYB 3164160T and HYB 3165160T series of 4M x 16-bit Dynamic RAMs. The devices are fabricated using advanced first-generation 64 Mbit CMOS silicon gate process technology and operate with a single +3.3V power supply.
| Organization | 4M x 16-bit (4k & 8k Refresh) |
|---|---|
| Operating Temperature | 0 to 70 °C |
| Power Supply Voltage | +3.3V (+/-0.3V) |
| Package Type | P-TSOPII-54-1 (500 mil) |
| Max Active Power Dissipation | 396 mW (-50 version), 360 mW (-60 version) |
| Max Standby Power Dissipation | 7.2 mW (TTL), 720 W (MOS) |
| Refresh Cycles | 8192 cycles/128 ms |
The maximum active power dissipation is 396 mW.
Yes, it supports fast page mode capability with specific cycle times.