The SN 7000 is a logic-level N-channel enhancement-mode small-signal transistor from Texas Instruments. Its maximum drain-source voltage is 60 V, maximum drain current is 0.25 A, and maximum drain-source resistance is 5 ohms.
This document is a technical datasheet for the Siemens SN 7000 SIPMOS (Silicon Insulated Gate Field Effect Transistor) Small-Signal Transistor. It describes an N-channel device with logic-level operation, featuring a threshold voltage of approximately 0.8V to 1.4V and a maximum drain-source breakdown voltage of 60V.
The datasheet provides comprehensive electrical characteristics for static and dynamic parameters at 25°C, including input/output capacitances, transconductance, and switching times. It also details the thermal properties, such as power dissipation limits and operating temperature ranges from -55°C to +150°C.
| Drain source voltage (Vos) | 60 V |
|---|---|
| Continuous drain current (lb) | 0.25 A |
| Power dissipation (Prot) | 0.63 W |
| Chip operating temperature range | -55 ...+150 °C |
| Input capacitance (Ciss) | 60 pF to 80 pF |
The maximum drain-source voltage (Vos) is 60 V.
The maximum continuous drain current (lb) is 0.25 A.