ISSI IS42S81600A/IS42S16800A/IS42S32400A 128Mb SDRAM Datasheet

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs are synchronized to a positive clock edge.


ISSI IS42S81600A/IS42S16800A/IS42S32400A 128Mb SDRAM Datasheet - cover page
Brand
ISSI
Category
Memory
Document type
Datasheet
Language
English
Pages
61
File format
PDF
File size
544 KB
Published
12 June, 2012
Updated
30 September, 2023
MD5 checksum
4805FDF3075FC97E29665D3363172236

About this manual

This document provides preliminary information for the ISSI 128Mb Synchronous DRAM family, specifically the IS42S81600A, IS42S16800A, and IS42S32400A models. The devices utilize a pipeline architecture to achieve high-speed data transfer and are organized as quad-bank DRAMs with asynchronous interfaces. They operate in 3.3V memory systems and support various burst lengths and sequences to optimize performance.

What's inside

  • Features
  • Device Overview
  • Key Timing Parameters
  • Pin Configurations
  • Pin Functions
  • Functional Block Diagram

Specifications

Clock Frequency166, 143, 100 MHz
Power Supply3.3V
Capacity128Mb
InterfaceLVTTL
Temperature RangeIndustrial
Package Type (x8)54-pin TSOPII
Package Type (x32)86-pin TSOPII

Frequently asked questions

What is the maximum clock frequency for these DRAMs?

The maximum clock frequency is 166 MHz.

What voltage is required for operation?

The devices operate in 3.3V V DD and 3.3V V DDQ memory systems.

Are these devices available in industrial temperature ranges?

Yes, Industrial Temperature Availability is listed as a feature.

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