BPX 43 is a NPN silicon phototransistor with applications from 450 nm to 1100 nm and high linearity. It is hermetically sealed in a metal package (TO-18) with a base connection and is suitable for 125°C environments. It can be used in photointerrupters and industrial electronics applications.
This document is a technical datasheet for the Siemens BPX 43 series of Silicon NPN Phototransistors. It specifies that these components are hermetically sealed in a TO-18 metal package with a base connection, suitable for operating temperatures up to 125 °C.
The datasheet provides comprehensive electrical specifications including maximum ratings such as collector-emitter voltage and total power dissipation. It also details the spectral sensitivity range from 450 nm to 1100 nm and lists specific ordering codes (BPX 43-2 through BPX 43-5) based on grouped photocurrent performance.
| Collector-emitter voltage | 50 V |
|---|---|
| Collector current | 50 mA |
| Total power dissipation | 220 mW |
The device is suitable for applications from -55 °C to +125 °C.
The maximum rated collector-emitter voltage is 50 V.