Advanced Power Technology 1002MP Pulsed RF Transistor Datasheet

The 1002MP is a high performance common base transistor capable of providing 2 Watts of pulsed RF output power in the band 960 to 1215 MHz. This transistor is specifically designed for pulsed Avionics amplifier applications. It utilizes gold metallization and low thermal resistance packaging to provide high reliability and supreme ruggedness.


Advanced Power Technology 1002MP Pulsed RF Transistor Datasheet - cover page
Brand
Advanced
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
179 KB
Published
12 June, 2012
Updated
30 September, 2023
MD5 checksum
1563403B06A40F43B4432F8CB34D6BA4

About this manual

The 1002MP is a common base transistor designed specifically for pulsed avionics amplifier applications. It operates in the frequency band from 960 to 1215 MHz and provides up to 2 Watts of pulsed RF output power.

The device utilizes gold metallization and low thermal resistance packaging to ensure high reliability and ruggedness. Key electrical characteristics include a maximum collector current of 250 mA, a typical power gain of 11 dB at 1150 MHz, and a collector efficiency of 45% with a pulse width of 20 microseconds.

What's inside

  • General Description
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Functional Characteristics
  • Case Outline
  • Pin Configuration

Specifications

Frequency Band960 to 1215 MHz
Pulsed RF Output Power2 Watts
Maximum Collector to Base Voltage50 V
Maximum Emitter to Base Voltage3.5 V
Maximum Collector Current250 mA
Operating Junction Temperature+200 °C

Frequently asked questions

What is the primary application for the 1002MP transistor?

It is specifically designed for pulsed Avionics amplifier applications.

What type of packaging does the 1002MP use?

The device utilizes gold metallization and low thermal resistance packaging.

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