This document provides technical specifications for the MOSPEC 2N6050 through 2N6059 series of Darlington Complementary Silicon-Power Transistors. The devices are available as PNP (2N6050, 2N6051, 2N6052) and NPN (2N6057, 2N6058, 2N6059) types.
| Collector-Emitter Voltage Vceo | 60, 80, or 100 Volts |
|---|---|
| Collector Current - Continuous Ic | 12 A |
| Total Power Dissipation Pp | 150 W at Tj = 25°C |
| Operating and Storage Junction Temperature Range | -65 to +200 °C |
| Thermal Resistance Junction to Case RthetaJC | 1.17 °C/W |
These devices are designed for use in general-purpose power amplifier and low frequency switching applications.
Power dissipation must be derated at a rate of 0.85 watts per degree Celsius above 25 degrees C.