The MOSPEC MJE2360T and MJE2361T are NPN silicon transistors designed for general‑purpose high‑voltage applications. They provide a collector‑emitter sustaining voltage of up to 350 V (minimum) and a maximum power dissipation of 30 W at 25 °C.
The document lists electrical, thermal, and dynamic characteristics, including current gain, gain‑bandwidth product, and safe operating area limits, to help designers select appropriate operating conditions for these devices.
| Collector‑Emitter Voltage (VCE) | 350 V (MJE2360T) / 375 V (MJE2361T) |
|---|---|
| Collector Current Continuous | 0.5 A |