The MOSPEC TIP120 series includes six complementary silicon power transistors (TIP120, TIP121, TIP122, TIP125, TIP126, TIP127) designed for general‑purpose amplifier and low‑speed switching applications. The datasheet provides key electrical characteristics, maximum ratings, and thermal data for each device.
Key sections cover features, maximum ratings, electrical and dynamic characteristics, thermal specifications, pin configuration, switching times, and safe operating area curves, allowing designers to select the appropriate transistor for their circuits.
| Collector‑Emitter Sustaining Voltage (VCEO) Minimum | 60 V (TIP120/TIP125), 80 V (TIP121/TIP126), 100 V (TIP122/TIP127) |
|---|---|
| Collector‑Emitter Saturation Voltage (VCE(sat)) Max @ Ic=3.04 A | 2.0 V (TIP120) |
| Continuous Collector Current (IC) | 5.0 A |
| Total Power Dissipation (P_D) @ 25 °C | 65 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.92 °C/W |
| Operating Temperature Range | -65 °C to +150 °C |
| Base‑Emitter On Voltage (VBE(on)) | 2.5 V |
Each device can dissipate up to 65 W when mounted at 25 °C.
The junction‑to‑case thermal resistance is 1.92 °C/W.
They are rated for operation from –65 °C up to +150 °C.