The 29VE020 is a 256K x 8 CMOS page mode EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide layer provide very high read and write speeds and data retention capabilities.
The SST 29VE020 is a 256K x 8 CMOS page mode EEPROM manufactured with Silicon Storage Technology's proprietary high-performance CMOS SuperFlash technology. It is designed for applications requiring convenient and economical updating of program, configuration, or data memory, offering significant improvements in performance and reliability compared to 5-volt EEPROM or EPROM approaches.
The device features single 2.7-volt read and write operations and includes a split gate cell design with a thick oxide tunneling injector for better reliability. It offers a typical byte-write time of 39 microseconds and a complete memory rewrite time of 10 seconds. The 29VE020 is available in 32-pin TSOP, 32-lead PLCC, and 32-pin PDIP packages.
| Capacity | 2 Megabit (256K x 8) |
|---|---|
| Technology | CMOS SuperFlash |
| Operating Voltage | 2.7V only |
| Endurance | 100,000 Cycles |
| Data Retention | Greater than 100 years |
| Access Time | 200 and 250 ns |
| Page Size | 128 Bytes per Page |
| Packages | 32-Pin TSOP, 32-Lead PLCC, 32 Pin Plastic DIP |
The device has a typical endurance of 100,000 cycles.
The entire memory of 256K bytes can be written in as little as 10 seconds.
No, the internally timed write cycle executes both erase and program transparently to the user.