Key facts
- Brand
- SST
- Model
- SST29LE010
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-06-11
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SST 1 Megabit (128K x 8) Page Mode EEPROM SST29EE010 SST29LE010 SST29VE010
This document is a technical datasheet for the SST29EE010, SST29LE010, and SST29VE010 family of 1 Megabit (128K x 8) CMOS page mode EEPROMs. Manufactured using Silicon Storage Technology's proprietary SuperFlash technology, these devices offer single-voltage read and write operations tailored to specific supply voltages: 5.0V for the EE010, 3.0V for the LE010, and 2.7V for the VE010.
Read onlineSST SST29LE010 specifications
| Memory Capacity | 1 Megabit (128K x 8) |
|---|---|
| Endurance | 100,000 Cycles (typical) |
| Data Retention | Greater than 100 years |
| Active Current (5V) | 20 mA (typical) |
| Standby Current | 10 uA (typical) |
| Page-Write Cycle Time | 5 ms (typical) |
| Complete Memory Rewrite Time | 5 sec (typical) |
| Effective Byte-write Cycle Time | 39 us (typical) |
| Read Access Time (5V) | 90 and 120 ns |
Source: SST 1 Megabit (128K x 8) Page Mode EEPROM SST29EE010 SST29LE010 SST29VE010
All SST SST29LE010 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the voltage requirements for each model?
The SST29EE010 requires 5.0V, the SST29LE010 requires 3.0V, and the SST29VE010 requires 2.7V.
From: SST 1 Megabit (128K x 8) Page Mode EEPROM SST29EE010 SST29LE010 SST29VE010
What is the typical page-write cycle time?
The typical page-write cycle time is 5 ms.
From: SST 1 Megabit (128K x 8) Page Mode EEPROM SST29EE010 SST29LE010 SST29VE010
What is the typical write endurance of the SST29EE010/LE010/VE010 EEPROMs?
The devices are rated for 100,000 write cycles typical.
From: SST 1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 SST29LE010 SST29VE010 handbook
How long does it take to rewrite the entire memory?
A complete memory rewrite can be done in about 5 seconds typical.
From: SST 1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 SST29LE010 SST29VE010 handbook
What is the write endurance of the SST29EE010/LE010/VE010?
The devices are rated for 100 000 write cycles typical.
From: SST 1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 SST29LE010 SST29VE010 Manual
How long does it take to rewrite the entire memory?
A full memory rewrite can be completed in about 5 seconds typical.
From: SST 1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 SST29LE010 SST29VE010 Manual