This product is a 600 mWatt DO-35 glass package silicon rectifier diode with a working temperature range of -65 to 175 oC and high surge current capability. It can be used in harsh environments such as military and aerospace.
This document provides technical data for Microsemi silicon rectifier diodes, specifically models 1N645 through 1N649, housed in a DO-35 glass package. These components are designed for use as general-purpose rectifiers in power supplies or for clipping and steering applications. They serve as a high-performance alternative to small signal diodes where space is limited and are suitable for hostile environments requiring hermeticity and reliability, such as military and aerospace applications.
| Package Type | DO-35 Glass Package |
|---|---|
| Power Dissipation | 600 mWatts |
| Average Forward Rectified Current | 400 mAmps |
| Operating Temperature Range | -65 to 175 °C |
| Thermal Impedance | 35 oC iW |
They are used as general purpose rectifiers in power supplies, for clipping and steering applications, and are a high performance alternative to small signal diodes where space does not permit use of power rectifiers.
Yes, they may be used in hostile environments where hermeticity and reliability are important, such as Military and Aero/Space, with MIL-S- 19500/ 240 approvals.