This document provides technical specifications for the 2N3375, 2N3632, and 2N3733 silicon epitaxial NPN planar high frequency transistors. These devices are designed for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits operating in the VHF-UHF region with frequencies from 130 to 400 MHz.
| Frequency Range | 130 to 400 MHz |
|---|---|
| Collector Voltage | 28V |
| Power Output | 2.5 to 13.5W |
| Configuration | Common Emitter |
These RF transistors are intended for operation in the VHF-UHF region, specifically from 130 to 400 MHz.
The absolute maximum collector-to-emitter voltage for all three models is 40 V.
The total dissipation at 25°C stud for both the 2N3632 and 2N3733 transistors is 23.0 W.