This is a PDF file about NPN silicon transistor. The file contains the product's performance parameters, including maximum ratings, working temperature range, and package types
This document provides technical specifications for the Microsemi 2N3498 series of NPN silicon transistors. The devices are qualified per MIL-PRF-19500/366 standards and are available in TO-5 and TO-39 packages.
| Collector-Emitter Voltage (Vceo) | 100 Vdc for 2N3498, 150 Vdc for 2N3500 |
|---|---|
| Collector Current (Ic) | 500 mA for 2N3498, 300 mA for 2N3500 |
| Total Power Dissipation @Tc = 25°C | 1.0 W for 2N3498, 5.0 W for 2N3500 |
| Operating Junction Temp. Range (Ty) | -55 to +200 °C |
The devices are qualified per MIL-PRF-19500/ 366.
The maximum collector-emitter breakdown voltage (Viceo) for the 2N3498 is 100 Vdc.