The GC4400 series are high voltage, high power (cathode base) PIN diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. Each device can withstand storage temperatures from -65° to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-S-19500. The GC4400 series will operate typically with +50 mA forward bias. Breakdown voltages are available up to 1000 volts.
The GC4400 series consists of high voltage, high power PIN diodes made from high resistivity silicon and passivated with silicon dioxide for stability and reliability. These devices are designed to withstand storage temperatures from -65°C to +200°C and operate over a range of -55°C to +150°C, meeting or exceeding military environmental specifications of MIL-S-19500.
| Operating Temperature | -55°C to +150°C |
|---|---|
| Storage Temperature | -65°C to +200°C |
| Forward Bias Current | +50 mA |
| Breakdown Voltage | up to 1000 volts |
| Maximum Leakage Current | 0.5A |
They can be used as on/off elements, switches, or current controlled resistors in attenuators for RF circuits.
All devices meet or exceed military environmental specifications of MIL-S-19500.