1N5913 is a silicon diode produced by Infineon with a single pass, rated power of 0.2W, rated current of 1A, rated voltage of 50V, and reverse breakdown voltage of 100V.
The document details the features of a series of silicon zener diodes manufactured by Microsemi Corp., specifically models ranging from 1N5913B to 1N5956B. These devices are designed with a power dissipation rating of 1.5 Watts and can withstand large surge stresses.
| DC Power Dissipation | 1.5 Watt |
|---|---|
| Junction and Storage Temperature | -55°C to +200°C |
| Forward Voltage @ 200 mA | 1.2 Volts |
| Thermal Resistance Junction to Lead | 60°C/W |
The zener voltage ranges from 3.0V to 200V.
Suffix B denotes a +5% tolerance on the nominal zener voltage.
The typical weight is 0.4 grams.