These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75343.
This document is a datasheet for the Intersil HUF75343G3, HUF75343P3, and HUF75343S3S N-Channel UltraFET Power MOSFETs. These devices utilize the UltraFET process to achieve low on-resistance and are designed for high-efficiency applications such as switching regulators, motor drivers, and power management in portable products. The document provides absolute maximum ratings, electrical specifications, and typical performance curves.
| Drain Current (Continuous) | 75 A |
|---|---|
| Drain to Source Voltage | 55 V |
| On-Resistance (Typical) | 0.009 Ohm |
| Operating Temperature Range | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-247) | 0.55 °C/W |
| Turn-On Time | 125 ns |
The device supports a continuous drain current of 75A.
The rated voltage from drain to source is 55V.
They are intended for switching regulators, motor drivers, and power management in portable products.