2N4126 is a PNP silicon epitaxial transistor for switching and amplifier applications. Especially suitable for AF-driver and low-power output stages. As complementary type, the NPN transistor 2N4124 is recommended.
This document is a technical datasheet for the General Semiconductor 2N4126, a small signal PNP silicon epitaxial transistor designed for switching and amplifier applications. It is particularly suitable for AF-driver and low-power output stages.
The datasheet provides comprehensive mechanical data, including TO-92 plastic package dimensions and weight. It lists maximum ratings such as collector-emitter voltage (25 V) and power dissipation (625 mW), along with detailed electrical characteristics like DC current gain and cutoff currents.
| Package Type | TO-92 Plastic Package |
|---|---|
| Weight | approx. 0.18 g |
| Collector-Emitter Voltage (VCEO) | 25 V |
| Power Dissipation (Ptot) | 625 mW |
| Junction Temperature (Tj) | 150 °C |
The maximum power dissipation is 625 mW when the ambient temperature is 25 °C.
The package height ranges from a minimum of 4.92 mm to a maximum of 5.08 mm.
The document recommends using the NPN transistor 2N4124 as a complementary type.