MPS2222A is a NPN silicon epitaxial planar transistor for switching and amplifier applications.
This document is a technical datasheet for the MPS2222A, an NPN silicon epitaxial planar transistor designed by Advanced Information. The device is intended for switching and amplifier applications and is available in TO-92 plastic packages or SOT-23 cases (designated MMBT2222A). It can also be manufactured in a TO-18 pin configuration upon special request.
The datasheet provides comprehensive electrical characteristics, including collector-emitter breakdown voltage of 40V and continuous collector current up to 600mA. Key specifications cover DC current gain (hFE), switching times, capacitance values, and thermal resistance ratings for both junction-to-ambient and junction-to-case configurations.
| Collector-Base Voltage (VcBO) | 75 Volts |
|---|---|
| Collector-Emitter Voltage (VCEO) | 40 Volts |
| Emitter-Base Voltage (VEBO) | 6.0 Volts |
| Collector Current-Continuous (Ic) | 600 mA |
| Power Dissipation at Ta=25°C (Prot) | 625 mW |
| Thermal Resistance, Junction to Ambient Air (RθJA) | 200 °C/W |
| Junction Temperature (Tj) | 150 °C |
The standard case is TO-92 Plastic Package, though it is also available in SOT-23 (MMBT2222A) and TO-18 configurations.
The device can be stored between -55°C and +150°C.