MPS2907A is a PNP silicon epitaxial planar transistor for switching and amplifier applications. It is available in the pin configuration TO-18 upon special request, and also available in the SOT-23 case with the type designation MMBT2907A.
This document is a technical datasheet for the MPS2907A, a silicon epitaxial planar PNP transistor designed for switching and amplifier applications. It is available in TO-92 plastic packages or SOT-23 cases (designated MMBT2907A) and also on special request in TO-18 configurations.
The datasheet provides comprehensive electrical characteristics, including maximum ratings such as a collector-emitter voltage of 60 Volts and a power dissipation of 625 mW at 25°C. It lists specific parameters like DC current gain (hFE), cutoff currents, capacitance values, and switching times with associated test circuit diagrams.
| Collector-Base Voltage (VcBO) | 60 Volts |
|---|---|
| Collector-Emitter Voltage (VCEO) | 60 Volts |
| Emitter-Base Voltage (VEBO) | 5.0 Volts |
| Collector Current (Ic) | 600 mA |
| Power Dissipation at Ta = 25°C | 625 mW |
| Thermal Resistance Junction to Ambient (RθJA) | 200 °C/W |
| Junction Temperature (Tj) | 150 °C |
The maximum collector current (Ic) is rated at 600 mA.
Yes, it is also manufactured in the TO-18 pin configuration on special request.
The minimum DC current gain is 100 when Vce is 10 V and Ic is 10 mA.