This document describes the features and characteristics of the DMOS transistor 2N7000, including high input impedance, low gate threshold voltage, low drain-source ON resistance, high-speed switching, etc.
This document is a technical datasheet for the 2N7000 N-channel DMOS transistor manufactured by General Semiconductor. It specifies that the device features high input impedance, low gate threshold voltage, and CMOS logic compatibility within a TO-92 plastic package.
The text provides maximum ratings such as a drain-source voltage of 60V and continuous drain current of 300mA. Detailed electrical characteristics are listed for parameters including breakdown voltage, leakage currents, threshold voltage, on-resistance, and capacitance at 25°C ambient temperature.
| Drain-Source Voltage (Vdss) | 60 V |
|---|---|
| Gate-Source Voltage (pulsed) (Vgs) | +20 V |
| Drain Current (continuous) (Id) | 300 mA |
| Power Dissipation at Tamb = 25 °C (Pd) | 830 mW |
| Junction Temperature (Tj) | 150 °C |
| Gate-Source Threshold Voltage (Vgs(th)) Min. | 0.8 V |
| Input Capacitance (Ciss) | 60 pF |
The maximum forward continuous current (IF) is 500 mA.
The typical value is 1.5V, with a range from 0.8V to 3V.
The device can be stored between -65°C and +150°C.